Attribute
Description
Manufacturer Part Number
STD840DN40
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
2 NPN (Dual),...
Manufacturer Lead Time
55 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | 2 NPN (Dual) | |
| Maximum Collector Amps | 4A | |
| Max Collector-Emitter Breakdown | 400V | |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 2A | |
| Collector Cutoff Max | 250µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 2A, 5V | |
| Maximum Power Handling | 3W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | 8-DIP (0.300", 7.62mm) |
Description
Measures resistance at forward current 250µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 4A. Offers a collector cutoff current rated at 250µA. Features a DC current gain hFE at Ic evaluated at 1V @ 400mA, 2A. Mounting style Through Hole for structural integrity. Enclosure/case 8-DIP (0.300", 7.62mm) providing mechanical and thermal shielding. Peak power 3W for device protection. Type of transistor 2 NPN (Dual) for circuit architecture. Peak Vce(on) at Vge 1V @ 400mA, 2A for transistor parameters. Highest collector-emitter breakdown voltage 400V.
