ST13007D

ST13007D
Attribute
Description
Manufacturer Part Number
ST13007D
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays, NPN, 8A, 400V
Note : GST will not be applied to orders shipping outside of India

Stock:
45

Distributor: 122

Lead Time: Not specified

Quantity Unit Price Ext. Price
1 ₹ 40.44 ₹ 40.44

Stock:
45

Distributor: 111

Lead Time: Not specified


Quantity Unit Price Ext. Price
15 ₹ 40.44 ₹ 606.60

Stock:
1481

Distributor: 142

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 181.56 ₹ 181.56
10 ₹ 89.89 ₹ 898.90
100 ₹ 62.30 ₹ 6,230.00
500 ₹ 56.07 ₹ 28,035.00

Stock:
4953

Distributor: 121

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 182.16 ₹ 182.16
10 ₹ 90.36 ₹ 903.60
100 ₹ 86.12 ₹ 8,612.00
500 ₹ 81.86 ₹ 40,930.00
1000 ₹ 77.62 ₹ 77,620.00
5000 ₹ 73.37 ₹ 3,66,850.00

Product Attributes

Type Description
Category
Transistor Class NPN
Maximum Collector Amps 8A
Max Collector-Emitter Breakdown 400V
Vce Saturation (Max) @ Ib, Ic 2V @ 2A, 8A
Collector Cutoff Max 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5A, 5V
Maximum Power Handling 80W
Transition Freq -
Attachment Mounting Style Through Hole
Component Housing Style TO-220-3

Description

Measures resistance at forward current 100µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 8A. Offers a collector cutoff current rated at 100µA. Features a DC current gain hFE at Ic evaluated at 2V @ 2A, 8A. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 80W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 2V @ 2A, 8A for transistor parameters. Highest collector-emitter breakdown voltage 400V.

Stay Up to Date

Subscribe to our newsletter to receiveour weekly feed.