Attribute
Description
Manufacturer Part Number
STSA1805-AP
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
5A,
60V
Note :
GST will not be applied to orders shipping outside of India
Stock: 73
Distributor: 142
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 172.66 | ₹ 172.66 |
| 10 | ₹ 110.36 | ₹ 1,103.60 |
| 100 | ₹ 72.98 | ₹ 7,298.00 |
| 500 | ₹ 59.63 | ₹ 29,815.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 5A | |
| Max Collector-Emitter Breakdown | 60V | |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 200mA, 5A | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V | |
| Maximum Power Handling | 1.1W | |
| Transition Freq | 150MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Description
Provides a maximum collector current (Ic) of 5A. Features a DC current gain hFE at Ic evaluated at 600mV @ 200mA, 5A. Offers 150MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-226-3, TO-92-3 (TO-226AA) Formed Leads providing mechanical and thermal shielding. Peak power 1.1W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 600mV @ 200mA, 5A for transistor parameters. Highest collector-emitter breakdown voltage 60V.
