Attribute
Description
Manufacturer Part Number
STX790A-AP
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
PNP,
3A,
30V
Manufacturer Lead Time
55 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP | |
| Maximum Collector Amps | 3A | |
| Max Collector-Emitter Breakdown | 30V | |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 100mA, 3A | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 2V | |
| Maximum Power Handling | 900mW | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Description
Provides a maximum collector current (Ic) of 3A. Features a DC current gain hFE at Ic evaluated at 700mV @ 100mA, 3A. Mounting style Through Hole for structural integrity. Enclosure/case TO-226-3, TO-92-3 (TO-226AA) Formed Leads providing mechanical and thermal shielding. Peak power 900mW for device protection. Type of transistor PNP for circuit architecture. Peak Vce(on) at Vge 700mV @ 100mA, 3A for transistor parameters. Highest collector-emitter breakdown voltage 30V.
