Attribute
Description
Manufacturer Part Number
BUL7216
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
3A,
700V
Note :
GST will not be applied to orders shipping outside of India
Stock: 5579
Distributor: 142
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 181.56 | ₹ 181.56 |
| 10 | ₹ 92.56 | ₹ 925.60 |
| 100 | ₹ 80.10 | ₹ 8,010.00 |
| 500 | ₹ 65.86 | ₹ 32,930.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 3A | |
| Max Collector-Emitter Breakdown | 700V | |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 80mA, 800mA | |
| Collector Cutoff Max | 100µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 4 @ 2A, 5V | |
| Maximum Power Handling | 80W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current 100µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 3A. Offers a collector cutoff current rated at 100µA. Features a DC current gain hFE at Ic evaluated at 3V @ 80mA, 800mA. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 80W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 3V @ 80mA, 800mA for transistor parameters. Highest collector-emitter breakdown voltage 700V.
