MAPR-002729-170M00

MAPR-002729-170M00

Data Sheet

Attribute
Description
Manufacturer Part Number
MAPR-002729-170M00
Description
Diodes - BJT, NPN, 65V
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 65V
Transition Freq -
Noise Figure @ f -
Amplification Factor 9.11dB ~ 9.69dB
Maximum Power Handling 170W
DC Current Gain (hFE) @ Ic, Vce -
Maximum Collector Amps 27A
Attachment Mounting Style Chassis Mount
Component Housing Style -

Description

Provides a maximum collector current (Ic) of 27A. Delivers 9.11dB ~ 9.69dB gain to improve signal amplification efficiency. Mounting style Chassis Mount for structural integrity. Peak power 170W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 9.11dB ~ 9.69dB for transistor parameters. Highest collector-emitter breakdown voltage 65V.

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