Attribute
Description
Manufacturer Part Number
MAPR-002731-115M00
Manufacturer
Description
Diodes - BJT,
NPN,
65V
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 65V | |
| Transition Freq | - | |
| Noise Figure @ f | - | |
| Amplification Factor | 8.06dB ~ 8.45dB | |
| Maximum Power Handling | 115W | |
| DC Current Gain (hFE) @ Ic, Vce | - | |
| Maximum Collector Amps | - | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | - |
Description
Delivers 8.06dB ~ 8.45dB gain to improve signal amplification efficiency. Mounting style Chassis Mount for structural integrity. Peak power 115W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 8.06dB ~ 8.45dB for transistor parameters. Highest collector-emitter breakdown voltage 65V.