0912-7
Data Sheet
Attribute
Description
Manufacturer Part Number
0912-7
Manufacturer
Description
TRANS RF BIPO 50W 1A 55CT1
Manufacturer Lead Time
Not specified
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 60V | |
| Transition Freq | 960MHz ~ 1.215GHz | |
| Noise Figure @ f | - | |
| Amplification Factor | 8.5dB | |
| Maximum Power Handling | 50W | |
| DC Current Gain (hFE) @ Ic, Vce | 10 @ 100mA, 5V | |
| Maximum Collector Amps | 1A | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Measures resistance at forward current 960MHz ~ 1.215GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 1A. Features a DC current gain hFE at Ic evaluated at 10 @ 100mA, 5V. Offers 960MHz ~ 1.215GHz transition frequency for seamless signal modulation. Delivers 8.5dB gain to improve signal amplification efficiency. Peak power 50W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 8.5dB for transistor parameters. Highest collector-emitter breakdown voltage 60V.