1015MP
Data Sheet
Attribute
Description
Manufacturer Part Number
1015MP
Manufacturer
Description
TRANS RF BIPO 50W 1A 55FW1
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 65V | |
| Transition Freq | 1.025GHz ~ 1.15GHz | |
| Noise Figure @ f | - | |
| Amplification Factor | 10dB ~ 11dB | |
| Maximum Power Handling | 50W | |
| DC Current Gain (hFE) @ Ic, Vce | 20 @ 100mA, 5V | |
| Maximum Collector Amps | 1A | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Measures resistance at forward current 1.025GHz ~ 1.15GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 1A. Features a DC current gain hFE at Ic evaluated at 20 @ 100mA, 5V. Offers 1.025GHz ~ 1.15GHz transition frequency for seamless signal modulation. Delivers 10dB ~ 11dB gain to improve signal amplification efficiency. Peak power 50W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 10dB ~ 11dB for transistor parameters. Highest collector-emitter breakdown voltage 65V.