23A008

23A008

Data Sheet

Attribute
Description
Manufacturer Part Number
23A008
Description
TRANS RF BIPO 5W 400MA55BT2
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 22V
Transition Freq 3.7GHz
Noise Figure @ f -
Amplification Factor 8.5dB ~ 9.5dB
Maximum Power Handling 5W
DC Current Gain (hFE) @ Ic, Vce 20 @ 100mA, 5V
Maximum Collector Amps 400mA
Attachment Mounting Style -
Component Housing Style -

Description

Measures resistance at forward current 3.7GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 400mA. Features a DC current gain hFE at Ic evaluated at 20 @ 100mA, 5V. Offers 3.7GHz transition frequency for seamless signal modulation. Delivers 8.5dB ~ 9.5dB gain to improve signal amplification efficiency. Peak power 5W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 8.5dB ~ 9.5dB for transistor parameters. Highest collector-emitter breakdown voltage 22V.

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