2A5

2A5

Data Sheet

Attribute
Description
Manufacturer Part Number
2A5
Description
TRANS BIPO 55ET-2
Manufacturer Lead Time
Not specified

Our team will assist you shortly.

Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 22V
Transition Freq 3.4GHz ~ 3.7GHz
Noise Figure @ f -
Amplification Factor 7dB ~ 9dB
Maximum Power Handling 5.3W
DC Current Gain (hFE) @ Ic, Vce 20 @ 100mA, 5V
Maximum Collector Amps 3mA
Attachment Mounting Style -
Component Housing Style -

Description

Measures resistance at forward current 3.4GHz ~ 3.7GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 3mA. Features a DC current gain hFE at Ic evaluated at 20 @ 100mA, 5V. Offers 3.4GHz ~ 3.7GHz transition frequency for seamless signal modulation. Delivers 7dB ~ 9dB gain to improve signal amplification efficiency. Peak power 5.3W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 7dB ~ 9dB for transistor parameters. Highest collector-emitter breakdown voltage 22V.

Stay Up to Date

Subscribe to our newsletter to receiveour weekly feed.