MS1001

MS1001
Attribute
Description
Manufacturer Part Number
MS1001
Description
TRANS RF BIPO 270W 20A M174
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 18V
Transition Freq 30MHz
Noise Figure @ f -
Amplification Factor 13dB
Maximum Power Handling 270W
DC Current Gain (hFE) @ Ic, Vce 20 @ 5A, 5V
Maximum Collector Amps 20A
Attachment Mounting Style -
Component Housing Style -

Description

Measures resistance at forward current 30MHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 20A. Features a DC current gain hFE at Ic evaluated at 20 @ 5A, 5V. Offers 30MHz transition frequency for seamless signal modulation. Delivers 13dB gain to improve signal amplification efficiency. Peak power 270W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 13dB for transistor parameters. Highest collector-emitter breakdown voltage 18V.

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