MS1076

MS1076
Attribute
Description
Manufacturer Part Number
MS1076
Description
TRANS RF BIPO 320W 16A M174
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 35V
Transition Freq 30MHz
Noise Figure @ f -
Amplification Factor 12dB
Maximum Power Handling 320W
DC Current Gain (hFE) @ Ic, Vce 15 @ 7A, 5V
Maximum Collector Amps 16A
Attachment Mounting Style -
Component Housing Style -

Description

Measures resistance at forward current 30MHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 16A. Features a DC current gain hFE at Ic evaluated at 15 @ 7A, 5V. Offers 30MHz transition frequency for seamless signal modulation. Delivers 12dB gain to improve signal amplification efficiency. Peak power 320W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 12dB for transistor parameters. Highest collector-emitter breakdown voltage 35V.

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