MS1409

MS1409

Data Sheet

Attribute
Description
Manufacturer Part Number
MS1409
Description
TRANS RF BIPO 7W 1A TO39
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 40V
Transition Freq 175MHz
Noise Figure @ f -
Amplification Factor 10dB
Maximum Power Handling 7W
DC Current Gain (hFE) @ Ic, Vce 20 @ 100mA, 5V
Maximum Collector Amps 1A
Attachment Mounting Style -
Component Housing Style -

Description

Measures resistance at forward current 175MHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 1A. Features a DC current gain hFE at Ic evaluated at 20 @ 100mA, 5V. Offers 175MHz transition frequency for seamless signal modulation. Delivers 10dB gain to improve signal amplification efficiency. Peak power 7W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 10dB for transistor parameters. Highest collector-emitter breakdown voltage 40V.

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