SD1013
Data Sheet
Attribute
Description
Manufacturer Part Number
SD1013
Manufacturer
Description
TRANS RF BIPO 13W 1A M135
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 35V | |
| Transition Freq | 150MHz | |
| Noise Figure @ f | - | |
| Amplification Factor | 10dB | |
| Maximum Power Handling | 13W | |
| DC Current Gain (hFE) @ Ic, Vce | 10 @ 200mA, 5V | |
| Maximum Collector Amps | 1A | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Measures resistance at forward current 150MHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 1A. Features a DC current gain hFE at Ic evaluated at 10 @ 200mA, 5V. Offers 150MHz transition frequency for seamless signal modulation. Delivers 10dB gain to improve signal amplification efficiency. Peak power 13W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 10dB for transistor parameters. Highest collector-emitter breakdown voltage 35V.