Attribute
Description
Manufacturer Part Number
BLS2731-20,114
Manufacturer
Description
TRANSISTOR RF POWER SOT445C
Manufacturer Lead Time
52 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 75V | |
| Transition Freq | 3.1GHz | |
| Noise Figure @ f | - | |
| Amplification Factor | 10dB | |
| Maximum Power Handling | 270W | |
| DC Current Gain (hFE) @ Ic, Vce | 40 @ 500mA, 5V | |
| Maximum Collector Amps | 3A | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOT-445C |
Description
Measures resistance at forward current 3.1GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 3A. Features a DC current gain hFE at Ic evaluated at 40 @ 500mA, 5V. Offers 3.1GHz transition frequency for seamless signal modulation. Delivers 10dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case SOT-445C providing mechanical and thermal shielding. Peak power 270W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 10dB for transistor parameters. Highest collector-emitter breakdown voltage 75V.
