Attribute
Description
Manufacturer Part Number
BLS3135-65,114
Manufacturer
Description
TRANSISTOR RF POWER SOT422A
Manufacturer Lead Time
52 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 75V | |
| Transition Freq | 3.5GHz | |
| Noise Figure @ f | - | |
| Amplification Factor | 7dB | |
| Maximum Power Handling | 200W | |
| DC Current Gain (hFE) @ Ic, Vce | 40 @ 2A, 5V | |
| Maximum Collector Amps | 8A | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOT-422A |
Description
Measures resistance at forward current 3.5GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 8A. Features a DC current gain hFE at Ic evaluated at 40 @ 2A, 5V. Offers 3.5GHz transition frequency for seamless signal modulation. Delivers 7dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case SOT-422A providing mechanical and thermal shielding. Peak power 200W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 7dB for transistor parameters. Highest collector-emitter breakdown voltage 75V.
