MRF559G

MRF559G

Data Sheet

Attribute
Description
Manufacturer Part Number
MRF559G
Description
TRANS NPN 16V 150MA MACRO X
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 16V
Transition Freq -
Noise Figure @ f -
Amplification Factor 8dB ~ 9.5dB
Maximum Power Handling 2W
DC Current Gain (hFE) @ Ic, Vce 30 @ 50mA, 10V
Maximum Collector Amps 150mA
Attachment Mounting Style Surface Mount
Component Housing Style Micro-X ceramic (84C)

Description

Provides a maximum collector current (Ic) of 150mA. Features a DC current gain hFE at Ic evaluated at 30 @ 50mA, 10V. Delivers 8dB ~ 9.5dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case Micro-X ceramic (84C) providing mechanical and thermal shielding. Peak power 2W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 8dB ~ 9.5dB for transistor parameters. Highest collector-emitter breakdown voltage 16V.

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