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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | N and P-Channel | |
| Drain-Source Breakdown Volts | 30V, 20V | |
| Continuous Drain Current at 25C | 5.5A, 4A | |
| Max On-State Resistance | 30 mOhm @ 5.5A, 4.5V | |
| Max Threshold Gate Voltage | 1V @ 250µA | |
| Gate Charge at Vgs | 28nC @ 4.5V | |
| Input Cap at Vds | 900pF @ 10V | |
| Maximum Power Handling | 900mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SOIC (0.154", 3.90mm Width) |
Description
Measures resistance at forward current N and P-Channel for LED or diode evaluation. Supports a continuous drain current (Id) of 5.5A, 4A at 25°C. Supports Vdss drain-to-source voltage rated at 30V, 20V. Accommodates FET classification identified as N and P-Channel. Upholds 28nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 900pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Peak power 900mW for device protection. Peak Rds(on) at Id 28nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 30 mOhm @ 5.5A, 4.5V for MOSFET criteria. Peak Vgs(th) at Id 1V @ 250µA for MOSFET threshold level.
