STS8C5H30L
Data Sheet
Stock: 2
Distributor: 122
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 63.94 | ₹ 63.94 |
Stock: 1
Distributor: 130
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 132.35 | ₹ 132.35 |
| 10 | ₹ 108.36 | ₹ 1,083.60 |
| 100 | ₹ 78.74 | ₹ 7,874.00 |
| 500 | ₹ 68.29 | ₹ 34,145.00 |
| 1000 | ₹ 61.93 | ₹ 61,930.00 |
| 5000 | ₹ 56.61 | ₹ 2,83,050.00 |
Stock: 1
Distributor: 142
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 145.07 | ₹ 145.07 |
| 10 | ₹ 129.94 | ₹ 1,299.40 |
| 100 | ₹ 105.02 | ₹ 10,502.00 |
| 250 | ₹ 105.02 | ₹ 26,255.00 |
| 500 | ₹ 85.44 | ₹ 42,720.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | STripFET™ III | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | N and P-Channel | |
| Transistor Special Function | Logic Level Gate | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 8A, 5.4A | |
| Max On-State Resistance | 22mOhm @ 4A, 10V | |
| Max Threshold Gate Voltage | 1V @ 250µA | |
| Max Gate Charge at Vgs | 10nC @ 5V | |
| Max Input Cap at Vds | 857pF @ 25V | |
| Maximum Power Handling | 2W | |
| Ambient Temp Range | 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SOIC (0.154", 3.90mm Width) | |
| Vendor Package Type | 8-SOIC |
Description
Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Provided in a setup characterized as N and P-Channel. Supports a continuous drain current (Id) of 8A, 5.4A at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Provides FET characteristics categorized as Logic Level Gate. Guarantees maximum 10nC @ 5V gate charge at Vgs for enhanced switching efficiency. Upholds 10nC @ 5V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 857pF @ 25V at Vds for safeguarding the device. The input capacitance is rated at 857pF @ 25V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Enclosure type 8-SOIC ensuring device integrity. Peak power 2W for device protection. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 10nC @ 5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 22mOhm @ 4A, 10V for MOSFET criteria. Product or component classification series STripFET™ III. Manufacturer package type 8-SOIC for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs(th) at Id 1V @ 250µA for MOSFET threshold level.
