Stock: 12374
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 194.91 | ₹ 194.91 |
| 10 | ₹ 124.60 | ₹ 1,246.00 |
| 100 | ₹ 86.15 | ₹ 8,615.00 |
| 500 | ₹ 73.07 | ₹ 36,535.00 |
| 1000 | ₹ 61.05 | ₹ 61,050.00 |
| 2500 | ₹ 56.34 | ₹ 1,40,850.00 |
| 5000 | ₹ 53.31 | ₹ 2,66,550.00 |
| 10000 | ₹ 53.13 | ₹ 5,31,300.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 100V | |
| Continuous Drain Current at 25C | 90A (Tc) | |
| Max On-State Resistance | 7 mOhm @ 50A, 10V | |
| Max Threshold Gate Voltage | 3.5V @ 75µA | |
| Gate Charge at Vgs | 55nC @ 10V | |
| Input Cap at Vds | 4000pF @ 50V | |
| Maximum Power Handling | 114W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-PowerTDFN |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 90A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 100V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 55nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 4000pF @ 50V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-PowerTDFN providing mechanical and thermal shielding. Peak power 114W for device protection. Peak Rds(on) at Id 55nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 7 mOhm @ 50A, 10V for MOSFET criteria. Peak Vgs(th) at Id 3.5V @ 75µA for MOSFET threshold level.
