Stock: 1
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 179.78 | ₹ 179.78 |
| 10 | ₹ 114.81 | ₹ 1,148.10 |
| 100 | ₹ 79.30 | ₹ 7,930.00 |
| 500 | ₹ 67.20 | ₹ 33,600.00 |
| 1000 | ₹ 58.65 | ₹ 58,650.00 |
| 5000 | ₹ 49.04 | ₹ 2,45,200.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 200V | |
| Continuous Drain Current at 25C | 15.2A (Tc) | |
| Max On-State Resistance | 90 mOhm @ 7.6A, 10V | |
| Max Threshold Gate Voltage | 4V @ 30µA | |
| Gate Charge at Vgs | 11.6nC @ 10V | |
| Input Cap at Vds | 920pF @ 100V | |
| Maximum Power Handling | 62.5W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-PowerTDFN |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 15.2A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 200V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 11.6nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 920pF @ 100V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-PowerTDFN providing mechanical and thermal shielding. Peak power 62.5W for device protection. Peak Rds(on) at Id 11.6nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 90 mOhm @ 7.6A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 30µA for MOSFET threshold level.
