Stock: 11270
Distributor: 126
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 300.38 | ₹ 300.38 |
Stock: 395
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 379.14 | ₹ 379.14 |
| 10 | ₹ 249.20 | ₹ 2,492.00 |
| 100 | ₹ 186.90 | ₹ 18,690.00 |
| 500 | ₹ 164.65 | ₹ 82,325.00 |
| 1000 | ₹ 141.51 | ₹ 1,41,510.00 |
| 2500 | ₹ 132.61 | ₹ 3,31,525.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 650V | |
| Continuous Drain Current at 25C | 16A (Tc) | |
| Max On-State Resistance | 199 mOhm @ 9.9A, 10V | |
| Max Threshold Gate Voltage | 3.5V @ 660µA | |
| Gate Charge at Vgs | 43nC @ 10V | |
| Input Cap at Vds | 1520pF @ 100V | |
| Maximum Power Handling | 139W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 16A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 650V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 43nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 1520pF @ 100V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 139W for device protection. Peak Rds(on) at Id 43nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 199 mOhm @ 9.9A, 10V for MOSFET criteria. Peak Vgs(th) at Id 3.5V @ 660µA for MOSFET threshold level.
