IPW60R190C6

IPW60R190C6
Attribute
Description
Manufacturer Part Number
IPW60R190C6
Description
MOSFET N-CH 600V 20.2A TO247
Note : GST will not be applied to orders shipping outside of India

Stock:
4800

Distributor: 145

Lead Time: Not specified

Quantity Unit Price Ext. Price
159 ₹ 194.26 ₹ 30,887.34
119 ₹ 216.67 ₹ 25,783.73
92 ₹ 224.15 ₹ 20,621.80
67 ₹ 231.61 ₹ 15,517.87
43 ₹ 239.10 ₹ 10,281.30
18 ₹ 291.39 ₹ 5,245.02

Stock:
1165

Distributor: 108

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 408.51 ₹ 408.51
25 ₹ 226.95 ₹ 5,673.75
100 ₹ 186.90 ₹ 18,690.00
480 ₹ 146.85 ₹ 70,488.00
2640 ₹ 140.62 ₹ 3,71,236.80

Product Attributes

Type Description
Category
Field Effect Transistor Type MOSFET N-Channel, Metal Oxide
Drain-Source Breakdown Volts 600V
Continuous Drain Current at 25C 20.2A (Tc)
Max On-State Resistance 190 mOhm @ 9.5A, 10V
Max Threshold Gate Voltage 3.5V @ 630µA
Gate Charge at Vgs 63nC @ 10V
Input Cap at Vds 1400pF @ 100V
Maximum Power Handling 151W
Attachment Mounting Style Through Hole
Component Housing Style TO-247-3

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 20.2A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 600V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 63nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 1400pF @ 100V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-247-3 providing mechanical and thermal shielding. Peak power 151W for device protection. Peak Rds(on) at Id 63nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 190 mOhm @ 9.5A, 10V for MOSFET criteria. Peak Vgs(th) at Id 3.5V @ 630µA for MOSFET threshold level.

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