Stock: 1589
Distributor: 135
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 81.67 | ₹ 81,67,000.00 |
| 10000 | ₹ 97.90 | ₹ 9,79,000.00 |
| 1000 | ₹ 109.47 | ₹ 1,09,470.00 |
| 500 | ₹ 118.37 | ₹ 59,185.00 |
| 100 | ₹ 131.72 | ₹ 13,172.00 |
Stock: 1589
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 90.78 | ₹ 9,07,800.00 |
| 1000 | ₹ 97.01 | ₹ 97,010.00 |
| 500 | ₹ 102.35 | ₹ 51,175.00 |
| 100 | ₹ 108.58 | ₹ 10,858.00 |
| 25 | ₹ 113.92 | ₹ 2,848.00 |
Stock: 1573
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 113.47 | ₹ 11,34,700.00 |
| 1000 | ₹ 121.26 | ₹ 1,21,260.00 |
| 500 | ₹ 127.94 | ₹ 63,970.00 |
| 246 | ₹ 135.72 | ₹ 33,387.12 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 55V | |
| Continuous Drain Current at 25C | 120A | |
| Max On-State Resistance | 3.4 mOhm @ 25A, 10V | |
| Max Threshold Gate Voltage | 2.8V @ 1mA | |
| Gate Charge at Vgs | 191nC @ 10V | |
| Input Cap at Vds | 11516pF @ 25V | |
| Maximum Power Handling | 263W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 120A at 25°C. Supports Vdss drain-to-source voltage rated at 55V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 191nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 11516pF @ 25V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB providing mechanical and thermal shielding. Peak power 263W for device protection. Peak Rds(on) at Id 191nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 3.4 mOhm @ 25A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.8V @ 1mA for MOSFET threshold level.
