Attribute
Description
Manufacturer Part Number
MTM763200LBF
Manufacturer
Description
MOSFET N/P-CH 20V WSMINI6-F1
Manufacturer Lead Time
27 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | N and P-Channel | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 1.9A, 1.2A | |
| Max On-State Resistance | 105 mOhm @ 1A, 4V | |
| Max Threshold Gate Voltage | 1.3V @ 1mA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 280pF @ 10V | |
| Maximum Power Handling | 700mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 6-SMD, Flat Leads |
Description
Measures resistance at forward current N and P-Channel for LED or diode evaluation. Supports a continuous drain current (Id) of 1.9A, 1.2A at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Accommodates FET classification identified as N and P-Channel. The input capacitance is rated at 280pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 6-SMD, Flat Leads providing mechanical and thermal shielding. Peak power 700mW for device protection. Peak Rds(on) at Id and Vgs 105 mOhm @ 1A, 4V for MOSFET criteria. Peak Vgs(th) at Id 1.3V @ 1mA for MOSFET threshold level.
