Stock: 15000
Distributor: 157
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 15000 | ₹ 42.44 | ₹ 6,36,600.00 |
| 3000 | ₹ 45.99 | ₹ 1,37,970.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | TrenchFET® | |
| IC Encapsulation Type | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 P-Channel (Dual) | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 4A | |
| Max On-State Resistance | 100mOhm @ 3.1A, 4.5V | |
| Max Threshold Gate Voltage | 1V @ 250µA | |
| Max Gate Charge at Vgs | 11nC @ 5V | |
| Max Input Cap at Vds | 455pF @ 10V | |
| Maximum Power Handling | 3.1W | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SMD, Flat Leads | |
| Vendor Package Type | 1206-8 ChipFET™ |
Description
Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Provided in a setup characterized as 2 P-Channel (Dual). Supports a continuous drain current (Id) of 4A at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Guarantees maximum 11nC @ 5V gate charge at Vgs for enhanced switching efficiency. Upholds 11nC @ 5V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 455pF @ 10V at Vds for safeguarding the device. The input capacitance is rated at 455pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 8-SMD, Flat Leads providing mechanical and thermal shielding. Enclosure type 1206-8 ChipFET™ ensuring device integrity. Peak power 3.1W for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 11nC @ 5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 100mOhm @ 3.1A, 4.5V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type 1206-8 ChipFET™ for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs(th) at Id 1V @ 250µA for MOSFET threshold level.
