Attribute
Description
Manufacturer Part Number
MTM78E2B0LBF
Manufacturer
Description
MOSFET N-CH DL 20V WSMINI8-F1-B
Manufacturer Lead Time
27 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | 2 N-Channel (Dual) | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 4A | |
| Max On-State Resistance | 25 mOhm @ 2A, 4V | |
| Max Threshold Gate Voltage | 1.3V @ 1mA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 1100pF @ 10V | |
| Maximum Power Handling | 150mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SMD, Flat Lead |
Description
Measures resistance at forward current 2 N-Channel (Dual) for LED or diode evaluation. Supports a continuous drain current (Id) of 4A at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Accommodates FET classification identified as 2 N-Channel (Dual). The input capacitance is rated at 1100pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-SMD, Flat Lead providing mechanical and thermal shielding. Peak power 150mW for device protection. Peak Rds(on) at Id and Vgs 25 mOhm @ 2A, 4V for MOSFET criteria. Peak Vgs(th) at Id 1.3V @ 1mA for MOSFET threshold level.
