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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | 2 N-Channel (Half Bridge) | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 15A (Ta) | |
| Max On-State Resistance | 15 mOhm @ 8A, 10V | |
| Max Threshold Gate Voltage | 3.6V @ 250µA | |
| Gate Charge at Vgs | 18nC @ 10V | |
| Input Cap at Vds | 1400pF @ 30V | |
| Maximum Power Handling | 2.1W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SOIC (0.154", 3.90mm Width) |
Description
Measures resistance at forward current 2 N-Channel (Half Bridge) for LED or diode evaluation. Supports a continuous drain current (Id) of 15A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 60V. Accommodates FET classification identified as 2 N-Channel (Half Bridge). Upholds 18nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 1400pF @ 30V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Peak power 2.1W for device protection. Peak Rds(on) at Id 18nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 15 mOhm @ 8A, 10V for MOSFET criteria. Peak Vgs(th) at Id 3.6V @ 250µA for MOSFET threshold level.
