SI4650DY-T1-E3
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | TrenchFET® | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 N-Channel (Half Bridge) | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 8A | |
| Max On-State Resistance | 18mOhm @ 8A, 10V | |
| Max Threshold Gate Voltage | 3V @ 1mA | |
| Max Gate Charge at Vgs | 40nC @ 10V | |
| Max Input Cap at Vds | 1550pF @ 15V | |
| Maximum Power Handling | 3.1W | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SOIC (0.154", 3.90mm Width) | |
| Vendor Package Type | 8-SOIC |
Description
Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Provided in a setup characterized as 2 N-Channel (Half Bridge). Supports a continuous drain current (Id) of 8A at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Guarantees maximum 40nC @ 10V gate charge at Vgs for enhanced switching efficiency. Upholds 40nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 1550pF @ 15V at Vds for safeguarding the device. The input capacitance is rated at 1550pF @ 15V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Enclosure type 8-SOIC ensuring device integrity. Peak power 3.1W for device protection. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 40nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 18mOhm @ 8A, 10V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type 8-SOIC for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs(th) at Id 3V @ 1mA for MOSFET threshold level.
