SSM6L13TU(T5L,F,T)
Data Sheet
Attribute
Description
Manufacturer Part Number
SSM6L13TU(T5L,F,T)
Manufacturer
Description
MOSF N/P CH 20V 800MA CH UF6
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | N and P-Channel | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 800mA | |
| Max On-State Resistance | 143 mOhm @ 600MA, 4V | |
| Max Threshold Gate Voltage | 1V @ 1mA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 268pF @ 10V | |
| Maximum Power Handling | 500mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 6-SMD, Flat Leads |
Description
Measures resistance at forward current N and P-Channel for LED or diode evaluation. Supports a continuous drain current (Id) of 800mA at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Accommodates FET classification identified as N and P-Channel. The input capacitance is rated at 268pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 6-SMD, Flat Leads providing mechanical and thermal shielding. Peak power 500mW for device protection. Peak Rds(on) at Id and Vgs 143 mOhm @ 600MA, 4V for MOSFET criteria. Peak Vgs(th) at Id 1V @ 1mA for MOSFET threshold level.
