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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | TrenchFET® | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 P-Channel (Dual) | |
| Transistor Special Function | Logic Level Gate | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 2.1A | |
| Max On-State Resistance | 155mOhm @ 2.1A, 4.5V | |
| Max Threshold Gate Voltage | 600mV @ 250µA (Min) | |
| Max Gate Charge at Vgs | 6nC @ 4.5V | |
| Max Input Cap at Vds | - | |
| Maximum Power Handling | 1.1W | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SMD, Flat Leads | |
| Vendor Package Type | 1206-8 ChipFET™ |
Description
Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Provided in a setup characterized as 2 P-Channel (Dual). Supports a continuous drain current (Id) of 2.1A at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Provides FET characteristics categorized as Logic Level Gate. Guarantees maximum 6nC @ 4.5V gate charge at Vgs for enhanced switching efficiency. Upholds 6nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case 8-SMD, Flat Leads providing mechanical and thermal shielding. Enclosure type 1206-8 ChipFET™ ensuring device integrity. Peak power 1.1W for device protection. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 6nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 155mOhm @ 2.1A, 4.5V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type 1206-8 ChipFET™ for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs(th) at Id 600mV @ 250µA (Min) for MOSFET threshold level.
