SI9433BDY-T1-GE3
Data Sheet
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 4.5A (Tc) | |
| Max On-State Resistance | 40 mOhm @ 6.2A, 4.5V | |
| Max Threshold Gate Voltage | 1.5V @ 250µA | |
| Gate Charge at Vgs | 14nC @ 4.5V | |
| Input Cap at Vds | - | |
| Maximum Power Handling | 1.3W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SOIC (0.154", 3.90mm Width) |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 4.5A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. Upholds 14nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. Mounting style Surface Mount for structural integrity. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Peak power 1.3W for device protection. Peak Rds(on) at Id 14nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 40 mOhm @ 6.2A, 4.5V for MOSFET criteria. Peak Vgs(th) at Id 1.5V @ 250µA for MOSFET threshold level.
