GB100XCP12-227
Data Sheet
Attribute
Description
Manufacturer Part Number
GB100XCP12-227
Manufacturer
Description
IGBTs - Arrays,
Modules,
1200V,
100A
Manufacturer Lead Time
10 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| IGBT Class | PT | |
| Max Collector-Emitter Breakdown | 1200V | |
| Maximum Collector Amps | 100A | |
| Maximum Power Handling | - | |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 100A | |
| Entry Signal Category | 8.55nF @ 25V | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | SOT-227-4 |
Description
Provides a maximum collector current (Ic) of 100A. Features a DC current gain hFE at Ic evaluated at 2V @ 15V, 100A. Designed as PT IGBT type for effective power switching. Set up with 8.55nF @ 25V input type for versatile applications. Mounting style Chassis Mount for structural integrity. Enclosure/case SOT-227-4 providing mechanical and thermal shielding. Peak Vce(on) at Vge 2V @ 15V, 100A for transistor parameters. Highest collector-emitter breakdown voltage 1200V.
