SMA4030

SMA4030

Data Sheet

Attribute
Description
Manufacturer Part Number
SMA4030
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
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Stock:
177

Distributor: 128

Lead Time: Not specified

Quantity Unit Price Ext. Price
5760 ₹ 117.48 ₹ 6,76,684.80
2880 ₹ 121.04 ₹ 3,48,595.20
1440 ₹ 121.93 ₹ 1,75,579.20
1000 ₹ 130.83 ₹ 1,30,830.00
500 ₹ 156.64 ₹ 78,320.00
200 ₹ 171.77 ₹ 34,354.00
100 ₹ 216.27 ₹ 21,627.00
50 ₹ 226.06 ₹ 11,303.00
10 ₹ 261.66 ₹ 2,616.60
1 ₹ 395.16 ₹ 395.16

Product Attributes

Type Description
Category
Transistor Class 4 NPN Darlington (Quad)
Maximum Collector Amps 3A
Max Collector-Emitter Breakdown 100V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 3mA, 1.5A
Collector Cutoff Max 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 1.5A, 4V
Maximum Power Handling 4W
Transition Freq 40MHz
Attachment Mounting Style Through Hole
Component Housing Style 12-SIP, Exposed Tab

Description

Measures resistance at forward current 10µA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 3A. Offers a collector cutoff current rated at 10µA (ICBO). Features a DC current gain hFE at Ic evaluated at 1.5V @ 3mA, 1.5A. Offers 40MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case 12-SIP, Exposed Tab providing mechanical and thermal shielding. Peak power 4W for device protection. Type of transistor 4 NPN Darlington (Quad) for circuit architecture. Peak Vce(on) at Vge 1.5V @ 3mA, 1.5A for transistor parameters. Highest collector-emitter breakdown voltage 100V.

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