2SA1407E
Data Sheet
Attribute
Description
Manufacturer Part Number
2SA1407E
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
PNP,
150mA,...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP | |
| Maximum Collector Amps | 150mA | |
| Max Collector-Emitter Breakdown | 200V | |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 5mA, 50mA | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 10V | |
| Maximum Power Handling | 1.2W | |
| Transition Freq | 400MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-225AA, TO-126-3 |
Description
Provides a maximum collector current (Ic) of 150mA. Features a DC current gain hFE at Ic evaluated at 800mV @ 5mA, 50mA. Offers 400MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-225AA, TO-126-3 providing mechanical and thermal shielding. Peak power 1.2W for device protection. Type of transistor PNP for circuit architecture. Peak Vce(on) at Vge 800mV @ 5mA, 50mA for transistor parameters. Highest collector-emitter breakdown voltage 200V.
