VEC2102-TL-E
Data Sheet
Attribute
Description
Manufacturer Part Number
VEC2102-TL-E
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
2 PNP (Dual),...
Manufacturer Lead Time
Not specified
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | 2 PNP (Dual) | |
| Maximum Collector Amps | 3A | |
| Max Collector-Emitter Breakdown | 30V | |
| Vce Saturation (Max) @ Ib, Ic | 235mV @ 30mA, 1.5A | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V | |
| Maximum Power Handling | 1.1W | |
| Transition Freq | 380MHz | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SMD, Flat Lead |
Description
Provides a maximum collector current (Ic) of 3A. Features a DC current gain hFE at Ic evaluated at 235mV @ 30mA, 1.5A. Offers 380MHz transition frequency for seamless signal modulation. Mounting style Surface Mount for structural integrity. Enclosure/case 8-SMD, Flat Lead providing mechanical and thermal shielding. Peak power 1.1W for device protection. Type of transistor 2 PNP (Dual) for circuit architecture. Peak Vce(on) at Vge 235mV @ 30mA, 1.5A for transistor parameters. Highest collector-emitter breakdown voltage 30V.
