Attribute
Description
Manufacturer Part Number
BDW83C
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 1
Distributor: 121
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 379.60 | ₹ 379.60 |
| 10 | ₹ 252.02 | ₹ 2,520.20 |
| 100 | ₹ 211.86 | ₹ 21,186.00 |
| 500 | ₹ 202.48 | ₹ 1,01,240.00 |
| 1000 | ₹ 192.85 | ₹ 1,92,850.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN - Darlington | |
| Maximum Collector Amps | 15A | |
| Max Collector-Emitter Breakdown | 100V | |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 150mA, 15A | |
| Collector Cutoff Max | 1mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 6A, 3V | |
| Maximum Power Handling | 130W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-247-3 |
Description
Measures resistance at forward current 1mA for LED or diode evaluation. Provides a maximum collector current (Ic) of 15A. Offers a collector cutoff current rated at 1mA. Features a DC current gain hFE at Ic evaluated at 4V @ 150mA, 15A. Mounting style Through Hole for structural integrity. Enclosure/case TO-247-3 providing mechanical and thermal shielding. Peak power 130W for device protection. Type of transistor NPN - Darlington for circuit architecture. Peak Vce(on) at Vge 4V @ 150mA, 15A for transistor parameters. Highest collector-emitter breakdown voltage 100V.
