MKI50-12F7
Data Sheet
Attribute
Description
Manufacturer Part Number
MKI50-12F7
Manufacturer
Description
MOD IGBT H-BRIDGE 1200V 65A E2
Manufacturer Lead Time
38 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| IGBT Class | NPT | |
| Max Collector-Emitter Breakdown | 1200V | |
| Maximum Collector Amps | 65A | |
| Maximum Power Handling | 350W | |
| Vce(on) (Max) @ Vge, Ic | 3.8V @ 15V, 50A | |
| Entry Signal Category | 3.3nF @ 25V | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | E2 |
Description
Provides a maximum collector current (Ic) of 65A. Features a DC current gain hFE at Ic evaluated at 3.8V @ 15V, 50A. Designed as NPT IGBT type for effective power switching. Set up with 3.3nF @ 25V input type for versatile applications. Mounting style Chassis Mount for structural integrity. Enclosure/case E2 providing mechanical and thermal shielding. Peak power 350W for device protection. Peak Vce(on) at Vge 3.8V @ 15V, 50A for transistor parameters. Highest collector-emitter breakdown voltage 1200V.