MUBW35-12A8
Data Sheet
Attribute
Description
Manufacturer Part Number
MUBW35-12A8
Manufacturer
Description
MODULE IGBT CBI E3
Manufacturer Lead Time
38 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| IGBT Class | NPT | |
| Max Collector-Emitter Breakdown | 1200V | |
| Maximum Collector Amps | 50A | |
| Maximum Power Handling | 225W | |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 35A | |
| Entry Signal Category | 1.65nF @ 25V | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | E3 |
Description
Provides a maximum collector current (Ic) of 50A. Features a DC current gain hFE at Ic evaluated at 3.1V @ 15V, 35A. Designed as NPT IGBT type for effective power switching. Set up with 1.65nF @ 25V input type for versatile applications. Mounting style Chassis Mount for structural integrity. Enclosure/case E3 providing mechanical and thermal shielding. Peak power 225W for device protection. Peak Vce(on) at Vge 3.1V @ 15V, 35A for transistor parameters. Highest collector-emitter breakdown voltage 1200V.