ALD1101ASAL

ALD1101ASAL
Attribute
Description
Manufacturer Part Number
ALD1101ASAL
Description
MOSFET 2N-CH 10.6V 8SOIC
Note : GST will not be applied to orders shipping outside of India

Stock:
35

Distributor: 117

Lead Time: Not specified

Quantity Unit Price Ext. Price
500 ₹ 460.57 ₹ 2,30,285.00
100 ₹ 503.77 ₹ 50,377.00
50 ₹ 545.00 ₹ 27,250.00
1 ₹ 973.66 ₹ 973.66

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tube
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual) Matched Pair
Transistor Special Function -
Drain-Source Breakdown Volts 10.6V
Continuous Drain Current at 25C -
Max On-State Resistance 75Ohm @ 5V
Max Threshold Gate Voltage 1V @ 10µA
Max Gate Charge at Vgs -
Max Input Cap at Vds -
Maximum Power Handling 500mW
Ambient Temp Range 0°C ~ 70°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 8-SOIC (0.154", 3.90mm Width)
Vendor Package Type 8-SOIC

Description

Provided in a setup characterized as 2 N-Channel (Dual) Matched Pair. Supports Vdss drain-to-source voltage rated at 10.6V. Mounting style Surface Mount for structural integrity. Operating temperature 0°C ~ 70°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Enclosure type 8-SOIC ensuring device integrity. Peak power 500mW for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id and Vgs 75Ohm @ 5V for MOSFET criteria. Manufacturer package type 8-SOIC for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 1V @ 10µA for MOSFET threshold level.

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