ALD1116PAL

ALD1116PAL
Attribute
Description
Manufacturer Part Number
ALD1116PAL
Description
MOSFET 2N-CH 10.6V 8PDIP
Note : GST will not be applied to orders shipping outside of India

Stock:
13

Distributor: 117

Lead Time: Not specified

Quantity Unit Price Ext. Price
1000 ₹ 258.10 ₹ 2,58,100.00
500 ₹ 259.43 ₹ 1,29,715.00
100 ₹ 308.57 ₹ 30,857.00
50 ₹ 336.63 ₹ 16,831.50
1 ₹ 627.45 ₹ 627.45

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tube
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual) Matched Pair
Transistor Special Function -
Drain-Source Breakdown Volts 10.6V
Continuous Drain Current at 25C -
Max On-State Resistance 500Ohm @ 5V
Max Threshold Gate Voltage 1V @ 1µA
Max Gate Charge at Vgs -
Max Input Cap at Vds 3pF @ 5V
Maximum Power Handling 500mW
Ambient Temp Range 0°C ~ 70°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Through Hole
Component Housing Style 8-DIP (0.300", 7.62mm)
Vendor Package Type 8-PDIP

Description

Provided in a setup characterized as 2 N-Channel (Dual) Matched Pair. Supports Vdss drain-to-source voltage rated at 10.6V. The highest input capacitance is 3pF @ 5V at Vds for safeguarding the device. The input capacitance is rated at 3pF @ 5V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature 0°C ~ 70°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case 8-DIP (0.300", 7.62mm) providing mechanical and thermal shielding. Enclosure type 8-PDIP ensuring device integrity. Peak power 500mW for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id and Vgs 500Ohm @ 5V for MOSFET criteria. Manufacturer package type 8-PDIP for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 1V @ 1µA for MOSFET threshold level.

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