Stock: 893
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 500 | ₹ 289.25 | ₹ 1,44,625.00 |
| 100 | ₹ 339.56 | ₹ 33,956.00 |
| 25 | ₹ 405.84 | ₹ 10,146.00 |
| 1 | ₹ 683.52 | ₹ 683.52 |
Stock: 40
Distributor: 120
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 33 | ₹ 325.64 | ₹ 10,746.12 |
| 11 | ₹ 348.88 | ₹ 3,837.68 |
| 5 | ₹ 453.54 | ₹ 2,267.70 |
| 1 | ₹ 697.76 | ₹ 697.76 |
Stock: 32
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 5 | ₹ 467.25 | ₹ 2,336.25 |
| 2 | ₹ 623.00 | ₹ 1,246.00 |
| 1 | ₹ 934.50 | ₹ 934.50 |
Stock: 38
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 679.96 | ₹ 679.96 |
| 10 | ₹ 398.72 | ₹ 3,987.20 |
| 100 | ₹ 339.09 | ₹ 33,909.00 |
| 500 | ₹ 289.25 | ₹ 1,44,625.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tube | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 4 N-Channel, Matched Pair | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 10.6V | |
| Continuous Drain Current at 25C | - | |
| Max On-State Resistance | 500Ohm @ 5V | |
| Max Threshold Gate Voltage | 1V @ 1µA | |
| Max Gate Charge at Vgs | - | |
| Max Input Cap at Vds | 3pF @ 5V | |
| Maximum Power Handling | 500mW | |
| Ambient Temp Range | 0°C ~ 70°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | 14-DIP (0.300", 7.62mm) | |
| Vendor Package Type | 14-PDIP |
Description
Provided in a setup characterized as 4 N-Channel, Matched Pair. Supports Vdss drain-to-source voltage rated at 10.6V. The highest input capacitance is 3pF @ 5V at Vds for safeguarding the device. The input capacitance is rated at 3pF @ 5V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature 0°C ~ 70°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case 14-DIP (0.300", 7.62mm) providing mechanical and thermal shielding. Enclosure type 14-PDIP ensuring device integrity. Peak power 500mW for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id and Vgs 500Ohm @ 5V for MOSFET criteria. Manufacturer package type 14-PDIP for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 1V @ 1µA for MOSFET threshold level.
