ALD114913SAL

ALD114913SAL
Attribute
Description
Manufacturer Part Number
ALD114913SAL
Description
MOSFET 2N-CH 10.6V 8SOIC
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Stock:
195

Distributor: 117

Lead Time: Not specified

Quantity Unit Price Ext. Price
1000 ₹ 232.51 ₹ 2,32,510.00
500 ₹ 236.90 ₹ 1,18,450.00
100 ₹ 282.76 ₹ 28,276.00
50 ₹ 308.95 ₹ 15,447.50
1 ₹ 580.28 ₹ 580.28

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line EPAD®
IC Encapsulation Type Tube
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual) Matched Pair
Transistor Special Function Depletion Mode
Drain-Source Breakdown Volts 10.6V
Continuous Drain Current at 25C 12mA, 3mA
Max On-State Resistance 500Ohm @ 2.7V
Max Threshold Gate Voltage 1.26V @ 1µA
Max Gate Charge at Vgs -
Max Input Cap at Vds 2.5pF @ 5V
Maximum Power Handling 500mW
Ambient Temp Range 0°C ~ 70°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 8-SOIC (0.154", 3.90mm Width)
Vendor Package Type 8-SOIC

Description

Provided in a setup characterized as 2 N-Channel (Dual) Matched Pair. Supports a continuous drain current (Id) of 12mA, 3mA at 25°C. Supports Vdss drain-to-source voltage rated at 10.6V. Provides FET characteristics categorized as Depletion Mode. The highest input capacitance is 2.5pF @ 5V at Vds for safeguarding the device. The input capacitance is rated at 2.5pF @ 5V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature 0°C ~ 70°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Enclosure type 8-SOIC ensuring device integrity. Peak power 500mW for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id and Vgs 500Ohm @ 2.7V for MOSFET criteria. Product or component classification series EPAD®. Manufacturer package type 8-SOIC for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 1.26V @ 1µA for MOSFET threshold level.

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