ALD212908SAL

ALD212908SAL
Attribute
Description
Manufacturer Part Number
ALD212908SAL
Description
MOSFET 2N-CH 10.6V 0.08A 8SOIC
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Stock:
50

Distributor: 117

Lead Time: Not specified

Quantity Unit Price Ext. Price
50 ₹ 368.66 ₹ 18,433.00

Stock:
18

Distributor: 108

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 673.73 ₹ 673.73
10 ₹ 443.22 ₹ 4,432.20
100 ₹ 368.46 ₹ 36,846.00
500 ₹ 359.56 ₹ 1,79,780.00
1000 ₹ 338.20 ₹ 3,38,200.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line EPAD®, Zero Threshold™
IC Encapsulation Type Tube
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual) Matched Pair
Transistor Special Function Logic Level Gate
Drain-Source Breakdown Volts 10.6V
Continuous Drain Current at 25C 80mA
Max On-State Resistance -
Max Threshold Gate Voltage 20mV @ 10µA
Max Gate Charge at Vgs -
Max Input Cap at Vds -
Maximum Power Handling 500mW
Ambient Temp Range 0°C ~ 70°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 8-SOIC (0.154", 3.90mm Width)
Vendor Package Type 8-SOIC

Description

Provided in a setup characterized as 2 N-Channel (Dual) Matched Pair. Supports a continuous drain current (Id) of 80mA at 25°C. Supports Vdss drain-to-source voltage rated at 10.6V. Provides FET characteristics categorized as Logic Level Gate. Mounting style Surface Mount for structural integrity. Operating temperature 0°C ~ 70°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Enclosure type 8-SOIC ensuring device integrity. Peak power 500mW for device protection. Product condition Active for availability and lifecycle. Product or component classification series EPAD®, Zero Threshold™. Manufacturer package type 8-SOIC for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 20mV @ 10µA for MOSFET threshold level.

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