Description

Provided in a setup characterized as 2 N-Channel (Dual) Asymmetrical. Supports a continuous drain current (Id) of 19A, 41A at 25°C. Supports Vdss drain-to-source voltage rated at 25V. Provides FET characteristics categorized as Logic Level Gate, 4.5V Drive. Guarantees maximum 8.4nC @ 4.5V gate charge at Vgs for enhanced switching efficiency. Upholds 8.4nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 1100pF @ 12V at Vds for safeguarding the device. The input capacitance is rated at 1100pF @ 12V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 8-PowerTDFN providing mechanical and thermal shielding. Enclosure type PG-TISON-8 ensuring device integrity. Peak power 2.5W for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 8.4nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 3mOhm @ 20A, 10V for MOSFET criteria. Product or component classification series OptiMOS™. Manufacturer package type PG-TISON-8 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 2V @ 250µA for MOSFET threshold level.