Description

Provided in a setup characterized as N and P-Channel Complementary. Supports a continuous drain current (Id) of 5.1A, 3.2A at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Provides FET characteristics categorized as Logic Level Gate, 2.5V Drive. Guarantees maximum 2.8nC @ 4.5V gate charge at Vgs for enhanced switching efficiency. Upholds 2.8nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. Rated as Automotive grade for quality assurance. The highest input capacitance is 419pF @ 10V at Vds for safeguarding the device. The input capacitance is rated at 419pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 175°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 8-PowerTDFN providing mechanical and thermal shielding. Enclosure type PG-TSDSON-8-FL ensuring device integrity. Peak power 2.5W for device protection. Product condition Active for availability and lifecycle. Certification AEC-Q101 for compliance or testing purposes. Peak Rds(on) at Id 2.8nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 55mOhm @ 5.1A, 4.5V for MOSFET criteria. Product or component classification series HEXFET®. Manufacturer package type PG-TSDSON-8-FL for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 1.4V @ 110µA for MOSFET threshold level.