Stock: 629
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 232.29 | ₹ 232.29 |
| 10 | ₹ 178.00 | ₹ 1,780.00 |
| 100 | ₹ 141.51 | ₹ 14,151.00 |
| 500 | ₹ 118.37 | ₹ 59,185.00 |
| 1000 | ₹ 101.46 | ₹ 1,01,460.00 |
| 2500 | ₹ 96.12 | ₹ 2,40,300.00 |
| 5000 | ₹ 93.45 | ₹ 4,67,250.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 600V | |
| Continuous Drain Current at 25C | 20.2A | |
| Max On-State Resistance | 190 mOhm @ 7.6A, 10V | |
| Max Threshold Gate Voltage | 4.5V @ 630µ | |
| Gate Charge at Vgs | 11nC @ 10V | |
| Input Cap at Vds | 1750pF @ 100V | |
| Maximum Power Handling | 151W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 20.2A at 25°C. Supports Vdss drain-to-source voltage rated at 600V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 11nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 1750pF @ 100V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 151W for device protection. Peak Rds(on) at Id 11nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 190 mOhm @ 7.6A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4.5V @ 630µ for MOSFET threshold level.
