Stock: 25000
Distributor: 126
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 152.72 | ₹ 152.72 |
Stock: 93900
Distributor: 145
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 196 | ₹ 158.14 | ₹ 30,995.44 |
| 146 | ₹ 176.39 | ₹ 25,752.94 |
| 113 | ₹ 182.46 | ₹ 20,617.98 |
| 82 | ₹ 188.55 | ₹ 15,461.10 |
| 53 | ₹ 194.63 | ₹ 10,315.39 |
| 22 | ₹ 237.20 | ₹ 5,218.40 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 650V | |
| Continuous Drain Current at 25C | 17.5A (Tc) | |
| Max On-State Resistance | 190 mOhm @ 7.3A, 10V | |
| Max Threshold Gate Voltage | 4.5V @ 730µA | |
| Gate Charge at Vgs | 68nC @ 10V | |
| Input Cap at Vds | 1850pF @ 100V | |
| Maximum Power Handling | 151W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 17.5A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 650V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 68nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 1850pF @ 100V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 151W for device protection. Peak Rds(on) at Id 68nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 190 mOhm @ 7.3A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4.5V @ 730µA for MOSFET threshold level.
