Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Provided in a setup characterized as 2 N-Channel (Dual). Supports a continuous drain current (Id) of 40A at 25°C. Supports Vdss drain-to-source voltage rated at 40V. Guarantees maximum 28.9nC @ 10V gate charge at Vgs for enhanced switching efficiency. Upholds 28.9nC @ 10V gate charge at Vgs for reliable MOSFET functionality. Rated as Automotive grade for quality assurance. The highest input capacitance is 1947pF @ 25V at Vds for safeguarding the device. The input capacitance is rated at 1947pF @ 25V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 175°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case SOT-1205, 8-LFPAK56 providing mechanical and thermal shielding. Enclosure type LFPAK56D ensuring device integrity. Peak power 64W for device protection. Product condition Active for availability and lifecycle. Certification AEC-Q101 for compliance or testing purposes. Peak Rds(on) at Id 28.9nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 6.8mOhm @ 20A, 10V for MOSFET criteria. Product or component classification series TrenchMOS™. Manufacturer package type LFPAK56D for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs(th) at Id 4V @ 1mA for MOSFET threshold level.